Growth and Characterisation of Antiferromagnetic Ni2MnAl Heusler Alloy Films
Growth and Characterisation of Antiferromagnetic Ni2MnAl Heusler Alloy Films
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DOI：
10.3390/magnetochemistry7090127
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发表时间：
2021-09-01
期刊：
影响因子：
2.7
通讯作者：
Hirohata, Atsufumi
中科院分区：
文献类型：
--
作者：
Huminiuc, Teodor;Whear, Oliver;Hirohata, Atsufumi
近年来反铁磁自旋电子学的快速发展为太赫兹操作的高效计算铺平了新的道路。到目前为止，主要的研究已经用常规的金属，例如，Ir-Mn和Pt-Mn，以及半导体，例如，CuMnAs，反铁磁体，其可能遭受其元素临界性和高电阻率。为了解决这些障碍，新的反铁磁薄膜正在紧张的发展中的设备操作高于室温。在这里，我们报告的结构和磁性能的反铁磁Ni 2 MnAl Heusler合金与和没有Fe和Co掺杂的薄膜形式，这具有显着的潜在设备的应用。
Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.