Temperature dependence of minority‐carrier mobility and recombination time in p‐type GaAs
Temperature dependence of minority‐carrier mobility and recombination time in p‐type GaAs
复制标题
p型GaAs中少数载流子迁移率和复合时间的温度依赖性
DOI：
10.1063/1.104332
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发表时间：
1991
影响因子：
4
通讯作者：
S. Wright
中科院分区：
文献类型：
--
作者：
K. Beyzavi;K. Lee;Dm Kim;M. Nathan;K. Wrenner;S. Wright
通过测量μ/GaAsn-p-n异质结双极晶体管的共发射极截止频率FT，确定了p型GaAsPe中电子迁移率随温度的变化关系。衬底厚度为0.6μm，掺杂4×10~(18)cm−_3Be。1055cm2/V S的300K值和5000cm2/V的 S的79K值与以前的测量值相当。指出了与计算值的差异。对于少数载流子，复合寿命也被测量为温度的函数。计算结果与计算的辐射复合时间符合得很好。
The electron mobility in p‐type GaAs, μpe, has been determined as a function of temperature by measuring the common‐emitter cutoff frequency, fT, of an AlGaAs/GaAs n‐p‐n heterojunction bipolar transistor. The base was 0.6 μm thick and it was doped with 4×1018 cm−3 Be. The 300 K value of 1055 cm2/V s and 79 K value of 5000 cm2/V s for μpe are comparable to the previously measured values. The discrepancy with the calculated values is pointed out. The recombination lifetime is also measured as a function of temperature for minority carriers. The results agree reasonably well with the calculated radiative recominbation time.