Electric-field-induced metal-insulator transition and quantum transport in large-area polycrystalline MoS2 monolayers
Electric-field-induced metal-insulator transition and quantum transport in large-area polycrystalline MoS2 monolayers
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DOI：
10.1103/physrevmaterials.6.064005
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发表时间：
2022-06
影响因子：
3.4
通讯作者：
Hao Ou;Tomoyuki Yamada;M. Mitamura;Y. Edagawa;T. Matsuda;K. Yanagi;Chang-Hsiao Chen;Lain‐Jong Li;T. Takenobu;J. Pu
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文献类型：
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作者：
Hao Ou;Tomoyuki Yamada;M. Mitamura;Y. Edagawa;T. Matsuda;K. Yanagi;Chang-Hsiao Chen;Lain‐Jong Li;T. Takenobu;J. Pu
单层膜具有独特的量子性质，是发展未来电子学和探索基础物理的极具吸引力的候选者。基于自旋-山谷耦合的高性能晶体管具有优越的输运特性。然而，这些晶体管使用了单晶片。在大多数大面积多晶中，由于晶界的影响，这些优良的输运特性还没有实现，其基本的低温输运也没有得到详细的研究。在这里，我们应用电解液门控方法，使用化学生长的厘米级多晶单分子膜。由于高载流子密度，电阻从绝缘到金属导电是系统可调的。重要的是，我们观察到了温度低至1.9K和高迁移率的金属输运。此外，磁输运表现出电场诱导的从弱局域到弱反局域的交叉，表明高载流子密度显著抑制了晶界效应，使本征量子输运成为可能。结果表明，多晶单分子膜在大面积纳米电子学中具有很大的应用潜力。
Monolayeris an attractive candidate for developing future electronics and exploring fundamental physics because of its unique quantum properties. High-performancetransistors with superior transport originating from spin-valley coupling have been reported. However, these transistors have used single-crystalline flakes. In most large-area polycrystalline, these excellent transport properties have not been realized because of the effects of grain boundaries, and their fundamental low-temperature transport has not been studied in detail. Here, we apply electrolyte-gating methods using chemically grown centimeter-scale polycrystalline monolayers. Owing to the high carrier density, the resistance is systematically tuned from insulating to metallic conduction. Importantly, we observed metallic transport at temperatures down to 1.9 K and a high mobility of. Moreover, the magnetotransport exhibits an electric-field-induced crossover from weak localization to weak antilocalization, indicating that high carrier density dramatically suppresses the grain boundary effects to enable intrinsic quantum transport. The results reveal that polycrystallinemonolayers have significant potential for use in large-area nanoelectronics.