Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer
Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer
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具有 InGaN 上波导层的 GaN 基蓝色激光二极管的设计考虑因素
DOI：
10.1109/jstqe.2012.2237015
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发表时间：
2013-07-01
影响因子：
4.9
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Feng, Mei-Xin;Liu, Jian-Ping;Yang, Hui
数值研究了在GaN基蓝光激光二极管有源区和p-AlGaN电子阻挡层之间插入InGaN中间层对器件电学和光学特性的影响。结果表明，InGaN中间层的插入降低了空穴注入多量子威尔斯的势垒高度。此外，发现未掺杂InGaN的背景电子浓度对LD性能起着关键作用。高于1 × 1017 cm-3的背景电子浓度可能在该层中引起不期望的电子-空穴复合。此外，我们还计算了光限制因子和内吸收损耗（IAL）的位置，In成分和InGaN层的厚度的依赖关系。通过插入InGaN层，获得了OCF的显著增加和IAL的减小。
Effects of an inserted InGaN interlayer between active region and p-AlGaN electron blocking layer on electrical and optical characteristics of GaN-based blue laser diodes are numerically investigated. It is found that the inserted InGaN interlayer reduces the barrier height for hole injection into multiple quantum wells. Moreover, it is found that the background electron concentration of the undoped InGaN plays a critical role in the LD performance. A background electron concentration higher than 1 × 1017 cm-3 may induce undesired electron-hole recombination in this layer. In addition, we have calculated the dependences of optical confinement factor and internal absorption loss (IAL) on location, In composition, and thickness of the InGaN layer. A significant increase in OCF and a decrease in IAL are obtained by inserting the InGaN layer.