Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device
Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device
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DOI：
10.1109/55.962662
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发表时间：
2001-11
影响因子：
4.9
通讯作者：
E. Lusky;Y. Shacham-Diamand;I. Bloom;B. Eitan
中科院分区：
文献类型：
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作者：
E. Lusky;Y. Shacham-Diamand;I. Bloom;B. Eitan
沟道热电子注入（CHE）是Flash产品中广泛使用的主要编程方法。空间分布只能通过基于压力的实验间接测量。一个简单的测量技术，以空间表征CHE注入。结果表明，在NROM/sup TM/器件编程过程中，亚阈值斜率退化提供了注入电子的位置和分布。结果表明，注入主要发生在漏区上方，因此，在亚阈值斜率退化的结果。基于二维建模，进一步示出了电荷分布宽度窄于40 nm。
Channel hot electron (CHE) injection, is widely used as main programming method in flash products. The spatial distribution could only be measured indirectly through stress-based experiments. A simple measurement technique to spatially characterize CHE injection is presented. It is shown that subthreshold slope degradation during programming of NROM/sup TM/ device provides the location and distribution of the injected electrons. It is shown that injection takes place mostly above the drain region and thus, results in subthreshold slope degradation. It is further shown, based on two-dimensional modeling, that charge distribution width is narrower than 40 nm.