Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization.
Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization.
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DOI：
10.1063/1.3525058
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发表时间：
2010-12
期刊：
影响因子：
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通讯作者：
Lan Zhang;Y. Ju;A. Hosoi;A. Fujimoto
中科院分区：
文献类型：
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作者：
Lan Zhang;Y. Ju;A. Hosoi;A. Fujimoto
我们介绍了一种新型的显微镜，它能够同时在纳米尺度上研究导电和介电材料的表面形貌和电学性质。微波原子力显微镜是扫描探针显微镜原理与微波测量技术相结合的产物。因此，在非接触AFM工作条件下，我们成功地产生了一个200 nm的Au膜涂层的玻璃晶片基板上的微波图像的空间分辨率为120 nm和测量的两种材料之间的电压差为19.2 mV。
We introduce a new type of microscopy which is capable of investigating surface topography and electrical property of conductive and dielectric materials simultaneously on a nanometer scale. The microwave atomic force microscopy is a combination of the principles of the scanning probe microscope and the microwave-measurement technique. As a result, under the noncontact AFM working conditions, we successfully generated a microwave image of a 200-nm Au film coating on a glass wafer substrate with a spatial resolution of 120 nm and a measured voltage difference of 19.2 mV between the two materials.