Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain
Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain
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晶格应变引起的短周期 InN/AlN 超晶格的带隙变化
DOI：
10.1002/pssb.202200549
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发表时间：
2023
期刊：
影响因子：
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通讯作者：
Kangawa Yoshihiro
中科院分区：
文献类型：
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作者：
Kawamura Takahiro;Basaki Kouhei;Korei Akito;Akiyama Toru;Kangawa Yoshihiro
III-V族GaN基氮化物半导体引起了人们的兴趣，因为它们的带隙可以通过构建合金和超晶格以及施加晶格应变来调节。在此，单轴和等双轴应变对短周期InN/AlN超晶格的带隙的影响是使用第一性原理计算检查。对于单轴应变，当超晶格在a轴和m轴方向上应变时，带隙以相同的方式变化;然而，当超晶格在c轴方向上应变时，带隙以不同的方式变化。即使当施加等双轴应变时，带隙的变化也取决于施加应变的方向。
III–V GaN‐based nitride semiconductors have attracted interest because their bandgaps can be tuned by constructing alloys and superlattices, and by applying lattice strain. Herein, the influence of uniaxial and equibiaxial strains on the bandgaps of short‐period InN/AlN superlattices is examined using first‐principles calculations. For the uniaxial strain, the bandgaps change in the same manner when the superlattices are strained in thea‐ andm‐axis directions; however, the bandgaps change in a different manner when the superlattices are strained in thec‐axis direction. Even when equibiaxial strain is applied, the change in bandgap depends on the direction in which the strain is applied.