Giant perpendicular magnetic anisotropy induced by double degeneracy of d-orbitals in W/MgO/Ag heterojunction

Giant perpendicular magnetic anisotropy induced by double degeneracy of d-orbitals in W/MgO/Ag heterojunction
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W/MgO/Ag异质结中d轨道双简并引起的巨大垂直磁各向异性

DOI:
10.1016/j.apsusc.2020.148421
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发表时间:
2020-11
影响因子:
6.7
通讯作者:
Guanghou Wang
Guanghou Wang
中科院分区:
材料科学1区
文献类型:
--
作者:
Xiaoyue Liu;Xiaodong Yan;Jueming Yang;Pingji Ge;Hongxia Yan;Jianguo Wan;Guixian Ge;Guanghou Wang

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大的垂直磁各向异性能(MAE)是设计高密度信息存储器件的关键。在这里,采用第一性原理计算,它已经显示出的可能性,以提高磁各向异性使用一个单一的W原子功能化的自由基的羟基(OH单键)的MgO(0 0 1)/Ag(0 0 1)异质结。OH-功能化的系统表现出巨大的垂直MAE为214.76 meV,这优于所有已报道的异质结。这种巨大的MAE的潜在机制是由于特殊的OH-配位场引起的费米能级附近的双简并dd轨道,它改变了自旋轨道耦合哈密顿量,增强了磁各向异性。同时,由于强的OH-配位场,得到了1.829 μ B的小自旋磁矩。这项工作提供了一种新的方法来产生高垂直MAE,这是非常有前途的纳米磁性器件。
Large perpendicular magnetic anisotropy energy (MAE) is crucial for designing high-density information storage devices. Here, employing first-principles calculations, it has shown the possibility to boost the magnetic anisotropy using a single W atom functionalized by radical of hydroxy (OHsingle bond) on the MgO(0 0 1)/Ag(0 0 1) heterojunction. The OH-functionalized system exhibited the giant perpendicular MAE of 214.76 meV, which outperformed all the reported heterojunctions. The underlying mechanism for the enormous MAE is attributed to the doubly degeneratedd-orbitals around the Fermi level caused by a special OH-ligand field which alters the spin-orbit coupling Hamiltonian and enhances the magnetic anisotropy. Meanwhile, the small spin magnetic moment of 1.829 μBis obtained due to the strong OH-ligand field. This work provides a new approach to generate high perpendicular MAE that is very promising for nanoscale magnetic devices.
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