Giant perpendicular magnetic anisotropy induced by double degeneracy of d-orbitals in W/MgO/Ag heterojunction
Giant perpendicular magnetic anisotropy induced by double degeneracy of d-orbitals in W/MgO/Ag heterojunction
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W/MgO/Ag异质结中d轨道双简并引起的巨大垂直磁各向异性
DOI:
10.1016/j.apsusc.2020.148421
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发表时间:
2020-11
影响因子:
6.7
通讯作者:
Guanghou Wang
中科院分区:
文献类型:
--
作者:
Xiaoyue Liu;Xiaodong Yan;Jueming Yang;Pingji Ge;Hongxia Yan;Jianguo Wan;Guixian Ge;Guanghou Wang
Large perpendicular magnetic anisotropy energy (MAE) is crucial for designing high-density information storage devices. Here, employing first-principles calculations, it has shown the possibility to boost the magnetic anisotropy using a single W atom functionalized by radical of hydroxy (OHsingle bond) on the MgO(0 0 1)/Ag(0 0 1) heterojunction. The OH-functionalized system exhibited the giant perpendicular MAE of 214.76 meV, which outperformed all the reported heterojunctions. The underlying mechanism for the enormous MAE is attributed to the doubly degeneratedd-orbitals around the Fermi level caused by a special OH-ligand field which alters the spin-orbit coupling Hamiltonian and enhances the magnetic anisotropy. Meanwhile, the small spin magnetic moment of 1.829 μBis obtained due to the strong OH-ligand field. This work provides a new approach to generate high perpendicular MAE that is very promising for nanoscale magnetic devices.
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影响因子:
56.9
作者:
A. Khajetoorians;A. Heinrich
通讯作者:
A. Khajetoorians;A. Heinrich
DOI:
10.1103/physrevb.49.12888
发表时间:
1994-05
期刊:
Physical review. B, Condensed matter
影响因子:
--
作者:
D. Weller;Yanqing Wu;J. Stöhr;M. Samant;B. Hermsmeier;C. Chappert
通讯作者:
D. Weller;Yanqing Wu;J. Stöhr;M. Samant;B. Hermsmeier;C. Chappert
影响因子:
3.7
作者:
Kresse, G;Furthmuller, J
通讯作者:
Furthmuller, J
影响因子:
3.7
作者:
Jie Li;Lei Gu;R. Wu
通讯作者:
Jie Li;Lei Gu;R. Wu
DOI:
10.1039/d0cp00238k
发表时间:
2020-03
期刊:
Physical chemistry chemical physics : PCCP
影响因子:
--
作者:
Xiaoyue Liu;Jueming Yang;Xingwu Zhai;Hong-Xia Yan;Yanwen Zhang;Long Zhou;J. Wan;Guixian Ge;Guanghou Wang
通讯作者:
Xiaoyue Liu;Jueming Yang;Xingwu Zhai;Hong-Xia Yan;Yanwen Zhang;Long Zhou;J. Wan;Guixian Ge;Guanghou Wang