Manipulating charge and energy transfer between 2D atomic layers via heterostructure engineering.
Manipulating charge and energy transfer between 2D atomic layers via heterostructure engineering.
复制标题
DOI：
10.1021/acs.nanolett.0c01722
复制
发表时间：
2020-06
期刊：
影响因子：
10.8
通讯作者：
Xue Liu;Jiajie Pei;Zehua Hu;Weijie Zhao;Sheng Liu;M. Amara;Kenji Watanabe;T. Taniguchi;
中科院分区：
文献类型：
--
作者：
Xue Liu;Jiajie Pei;Zehua Hu;Weijie Zhao;Sheng Liu;M. Amara;Kenji Watanabe;T. Taniguchi;
二维货车德瓦耳斯异质结构由于其独特的电学和光学性质而引起了人们的极大兴趣。全面理解和有效控制此类器件中的层间耦合对于实现其功能以及提高其性能至关重要。在这里，我们报告了一个成功的操纵层间电荷转移2D材料通过不同的堆叠层组成的石墨烯，六方氮化硼，和二硫化钨。在可见光激发下，尽管被少层氮化硼隔开，石墨烯和二硫化钨表现出它们的掺杂水平的明显调制，即，石墨烯中费米能级的变化高达120 meV，WS 2中的净电子积累。通过使用显微拉曼和光致发光光谱的组合，我们表明，调制起源于同时操纵每两个相邻层之间的电荷和/或能量转移。
Two-dimensional (2D) van der Waals heterostructures have attracted enormous research interests due to their emergent electrical and optical properties. The comprehensive understanding and efficient control of interlayer couplings in such devices are crucial for realizing their functionalities, as well as improving their performance. Here, we report a successful manipulation of interlayer charge transfer between 2D materials by varying different stacking layers consisting of graphene, hexagonal boron nitride, and tungsten disulfide. Under visible light excitation, despite being separated by few-layer boron nitride, the graphene and tungsten disulfide exhibit clear modulation of their doping level, i.e., a change of the Fermi level in graphene as large as 120 meV and a net electron accumulation in WS2. By using a combination of micro Raman and photoluminescence spectroscopy, we demonstrate that the modulation is originated from simultaneous manipulation of charge and/or energy transfer between each two adjacent layers.