Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery
Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery
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DOI：
10.1063/1.2186368
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发表时间：
2006-03
影响因子：
4
通讯作者：
Yi Zhou;Mingyu Li;Dake Wang;C. Ahyi;C. Tin;John R. Williams;Minseo Park;N. M. Williams;A. Hanser
中科院分区：
文献类型：
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作者：
Yi Zhou;Mingyu Li;Dake Wang;C. Ahyi;C. Tin;John R. Williams;Minseo Park;N. M. Williams;A. Hanser
一个垂直肖特基二极管整流器是使用体n−GaN晶片制造的。使用Ti Al在Ga面上制备Pt肖特基接触，在N面上制备全背面欧姆接触。Ga面和N面的均方根表面粗糙度分别为0.61和4.7nm。一个相对较高的击穿场为5.46kV scincm的实现没有额外的边缘终端。击穿电场随着器件尺寸的增大而减小。体GaN晶片的背景电子浓度很低（5× 1015 cm-3），即使没有特殊的边缘终端，这也可能导致相对较高的击穿场。在100 A scincm ~ 2的电流密度下，正向开启电压低至2.4V。该器件具有超快的反向恢复特性（反向恢复时间<20 ns）。
A vertical Schottky diode rectifier was fabricated using a bulk n−GaN wafer. Pt Schottky contacts were prepared on the Ga face and full backside ohmic contact was prepared on the N face by using Ti∕Al. The root mean square surface roughnesses of the Ga and N faces are 0.61 and 4.7nm, respectively. A relatively high breakdown field of 5.46kV∕cm was achieved with no additional edge termination. The breakdown field decreases as the size of the device increases. The background electron concentration of the bulk GaN wafer was low (5×1015cm−3), which may lead to a relatively high breakdown field even with no special edge termination. The forward turn-on voltage was as low as 2.4V at the current density of 100A∕cm2. The device exhibited an ultrafast reverse recovery characteristics (reverse recovery time <20ns).