Analysis and fabrication of microaperture GaAs-GaAlAs surface-emitting laser for near-field optical data storage
Analysis and fabrication of microaperture GaAs-GaAlAs surface-emitting laser for near-field optical data storage
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DOI：
10.1109/2944.954151
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发表时间：
2001-03
影响因子：
4.9
通讯作者：
S. Shinada;F. Koyama;N. Nishiyama;M. Arai;K. Iga
中科院分区：
文献类型：
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作者：
S. Shinada;F. Koyama;N. Nishiyama;M. Arai;K. Iga
提出了一种用于近场光存储的微孔径垂直腔面发射激光器（VCSEL）。采用二维有限元法对微口径VCSEL进行了近场分析。我们计算了在微孔径附近产生的光学近场的分布，并表明光斑尺寸可能小于100 nm，这是小于波长的8倍。我们制作了一个垂直腔面发射激光器的顶部表面上的Au膜加载，用于阻止发射光，并形成了一个亚波长大小的孔径使用聚焦离子束（FIB）蚀刻通过这个膜。在有源区面积为3 μ m/s/m的微孔径VCSEL中获得了单模工作。微分量子效率与形成400 nm正方形孔径之前相比增加了3倍。我们估计从400 nm正方形孔径辐射的光的功率密度为0.17 mW//spl mu/m/sup 2/。此外，我们使用扫描近场显微镜测量了200 nm方形孔径VCSEL的近场分布。
We have proposed a microaperture vertical cavity surface-emitting laser (VCSEL) for use in near-field optical data storage. We carried out the near-field analysis of microaperture VCSEL using two-dimensional (2-D) finite element method. We calculated the distribution of optical near-field generated near a microaperture, and showed that the spot size is potentially smaller than 100 nm, which is less than wavelength by a factor of 8. We fabricated a VCSEL loaded by an Au film on the top surface for blocking the emitting light and formed a subwavelength-size aperture using focused ion beam (FIB) etch through this film. Single-mode operation was obtained for a microaperture VCSEL with 3-/spl mu/m square active region. The differential quantum efficiency was increased by a factor of 3 in comparison with that before forming a 400-nm square aperture. We estimated the power density of light radiated from a 400-nm square aperture to be 0.17 mW//spl mu/m/sup 2/. In addition, we measured the near-field distribution of a 200-nm square aperture VCSEL by using a scanning near-field microscope.