Photoluminescence imaging under applied bias for characterization of Si surface passivation layers
Photoluminescence imaging under applied bias for characterization of Si surface passivation layers
复制标题
施加偏压下的光致发光成像用于表征硅表面钝化层
DOI：
10.1016/j.solmat.2012.05.041
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发表时间：
2012
影响因子：
6.9
通讯作者：
E. Marstein
中科院分区：
文献类型：
--
作者：
H. Haug;Ørnulf Nordseth;E. Monakhov;E. Marstein
在这项工作中，我们提出了一种新的表征技术，用于分析硅表面钝化层，使用光致发光成像装置。在这项技术中，测量钝化硅片的有效寿命，同时在背面的介质膜上施加外部偏置。我们证明，这种方法可以用来分析硅表面在反转、耗尽和积累条件下的钝化。本文以等离子体增强化学气相沉积a-SiNx：H钝化层的表征为例说明了该方法的可行性。在扩展的Shockley-Read-Hall理论和PC1D模拟的框架下对表征结果进行了解释。对于a-SiNx：H层，电子的有效表面复合速度参数是空穴的5~7倍，在光照下的固定绝缘体电荷密度为6.1−6.5×1011 cm−2，与电容-电压测量结果一致。
In this work, we present a novel characterization technique for the analysis of Si surface passivation layers, using a photoluminescence imaging setup. In this technique the effective lifetime of passivated Si wafers is measured while applying an external bias over a rear side dielectric film. We demonstrate that this method can be used to analyze the passivation of silicon surfaces in inversion, depletion and accumulation conditions. In this paper the method is illustrated by characterization of a-SiNx:H passivation layers deposited by plasma enhanced chemical vapor deposition. The characterization results are interpreted both in the framework of the extended Shockley–Read–Hall theory and by PC1D simulations. For the a-SiNx:H layers, the effective surface recombination velocity parameter is found to be 5 to 7 times larger for electrons than for holes and the fixed insulator charge density is found to be 6.1−6.5×1011cm−2under illumination, in agreement with results from capacitance–voltage measurements.