Digitally controllable variable high-Q MEMS capacitor for RF applications
Digitally controllable variable high-Q MEMS capacitor for RF applications
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适用于 RF 应用的数字可控可变高 Q MEMS 电容器
DOI：
10.1109/mwsym.2001.967331
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
Victor M. Bright
中科院分区：
文献类型：
--
作者：
Nils Hoivik;M. Michalicek;Yung;K. Gupta;Victor M. Bright
本文介绍了一种采用克罗诺斯MUMPS技术和倒装芯片技术处理的静电数字可控可变MEMS电容器的新设计。电容器由一组面积相等的单独板组成，这些板通过不同宽度的弹簧连接到键合盘上。当被静电力驱动时，这就产生了一个级联的snapdown效应。该电容器在750mhz时的测量q因子为140，调谐比为4:1。
This paper describes the novel design of an electrostatic digitally controllable variable MEMS capacitor constructed using Cronos MUMPS technology and flip-chip technology processing. The capacitor consists of an array of individual plates of equal area, which are connected to the bonding pads by springs of varying width. This creates a cascading snap-down effect when actuated by electrostatic forces. The capacitor has a measured Q-factor of 140 at 750 MHz, and a tuning ratio of 4:1.