ETCH RATE ACCELERATION OF SIO2 DURING WET TREATMENT AFTER GATE ETCHING
ETCH RATE ACCELERATION OF SIO2 DURING WET TREATMENT AFTER GATE ETCHING
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DOI：
10.1143/jjap.32.6114
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发表时间：
1993-12-01
期刊：
影响因子：
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通讯作者：
KADOMURA, S
中科院分区：
文献类型：
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作者：
TATSUMI, T;FUKUDA, S;KADOMURA, S
栅极蚀刻后，HF湿法处理过程中SiO2的蚀刻速率加快。这是由于暴露于等离子体而导致 SiO2 表面形成受损层所致。 X射线光电子能谱（XPS）、热解吸能谱（TDS）和原子力显微镜（AFM）分析表明，受损层包括三种类型的“损伤”：无序、溴污染和表面粗糙化。研究发现，真空紫外线 (VUV) 会导致 SiO2 网络的无序化。受损层的结合能较弱，粗糙度较大，可以与高频蚀刻剂更广泛地接触，从而更容易被蚀刻。
The etch rate of SiO2 during HF wet treatment was accelerated after gate etching. This was caused by a formation of a damaged layer on the SiO2 surface induced by the exposure to plasma. X-ray photoelectron spectroscopy (XPS), thermal desorption spectroscopy (TDS) and atomic force microscopy (AFM) analysis established that the damaged layer includes three types of ''damage'': disordering, bromine contamination and surface roughening. It was found that vacuum ultraviolet rays (VUV) contributed to the disordering of the SiO2 network. The damaged layer has a weaker binding energy and greater roughening that enable more extensive contact with the HF etchant, making it more susceptible to etching.