Recent advances in electron tomography:: TEM and HAADF-STEM tomography for materials science and semiconductor applications
Recent advances in electron tomography:: TEM and HAADF-STEM tomography for materials science and semiconductor applications
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DOI：
10.1017/s1431927605050361
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发表时间：
2005-10-01
影响因子：
2.8
通讯作者：
Bradley, J
中科院分区：
文献类型：
--
作者：
Kübel, C;Voigt, A;Bradley, J
电子层析成像是一种成熟的技术，用于生命科学应用中（几乎）无定形样品的三维结构测定。随着纳米技术和半导体工业的最新进展，在物理科学中也越来越需要高分辨率的三维（313）结构信息。在这篇文章中，我们评估的能力和局限性的透射电子显微镜（TEM）和高角度环形暗场扫描透射电子显微镜（HAADF-STEM）断层扫描的3D结构表征部分结晶高度结晶材料。我们对催化剂、储氢材料和不同半导体器件的分析表明，直径小至1-2 nm的特征可以通过电子断层扫描在三维空间中分辨。对于具有小单晶畴的部分结晶材料，明场TEM层析成像提供可靠的3D结构信息。HAADF-STEM断层扫描技术用途更广，也可用于半导体器件等高度结晶材料的高分辨率3D成像。
Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimensional (313) structural information in physical sciences. In this article, we evaluate the capabilities and limitations of transmission electron microscopy (TEM) and high-angle-annular-dark-field scanning transmission electron microscopy (HAADF-STEM) tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1-2 nm can be resolved in three dimensions by electron tomography. For partially crystalline materials with small single crystalline domains, bright-field TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.