Thinnest Nonvolatile Memory Based on Monolayer h‐BN
Thinnest Nonvolatile Memory Based on Monolayer h‐BN
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DOI：
10.1002/adma.201806790
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发表时间：
2019-02
影响因子：
29.4
通讯作者：
Xiaohan Wu;Ruijing Ge;P. Chen;H. Chou;Zhepeng Zhang;Yanfeng Zhang;S. Banerjee;M. Chiang;Jack C. Lee;D. Akinwande
中科院分区：
文献类型：
--
作者：
Xiaohan Wu;Ruijing Ge;P. Chen;H. Chou;Zhepeng Zhang;Yanfeng Zhang;S. Banerjee;M. Chiang;Jack C. Lee;D. Akinwande
在过去的十年里，2D材料在纳米电子学中引起了人们的极大兴趣。然而，人们认为原子级薄的层状材料不能在垂直堆叠结构中显示忆阻效应，直到最近发现单层过渡金属二硫属化物（TMD）原子电阻器，克服了亚纳米的尺度限制。本文报道了单层六方氮化硼（h-BN）中的非易失性电阻开关（NVRS）现象。使用不同的电极和结构研究了h-BN原子电阻器，其在单极和双极操作中具有无成形开关，具有大的开/关比（高达107）。此外，通过脉冲操作证明了快速开关速度（<15 ns）。与单层TMD相比，单原子薄的h-BN片层将垂直尺度减小到1.033 nm，代表了存储材料的创纪录厚度。基于从头算方法的模拟结果表明，在电开关过程中，金属离子取代h-BN空位是一种可能的机制。NVRS在单层h-BN中的存在表明缺陷，金属离子和界面之间的相互作用富有成效，并且可以推进柔性存储器，印刷电子，神经形态计算和射频开关的新兴应用。
2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub‐nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h‐BN), a typical 2D insulator, is reported. The h‐BN atomristors are studied using different electrodes and structures, featuring forming‐free switching in both unipolar and bipolar operations, with large on/off ratio (up to 107). Moreover, fast switching speed (<15 ns) is demonstrated via pulse operation. Compared with monolayer TMDs, the one‐atom‐thin h‐BN sheet reduces the vertical scaling to ≈0.33 nm, representing a record thickness for memory materials. Simulation results based on ab‐initio method reveal that substitution of metal ions into h‐BN vacancies during electrical switching is a likely mechanism. The existence of NVRS in monolayer h‐BN indicates fruitful interactions between defects, metal ions and interfaces, and can advance emerging applications on ultrathin flexible memory, printed electronics, neuromorphic computing, and radio frequency switches.