Extraordinary mobility in semiconducting carbon nanotubes
Extraordinary mobility in semiconducting carbon nanotubes
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DOI：
10.1021/nl034841q
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发表时间：
2004-01-01
期刊：
影响因子：
10.8
通讯作者：
Fuhrer, MS
中科院分区：
文献类型：
--
作者：
Durkop, T;Getty, SA;Fuhrer, MS
已经制造出沟道长度超过300微米的半导体碳纳米管晶体管。在这些长晶体管中，载流子传输是扩散的，并且沟道电阻主导传输。输运特性用于提取室温下的场效应迁移率（79 000 cm（2）/Vs）和估计本征迁移率（>100 000 cm（2）/Vs）。这些值超过了所有已知的半导体，这预示着纳米管在高速晶体管，单电子和少电子存储器以及化学/生物化学传感器中的应用。
Semiconducting carbon nanotube transistors with channel lengths exceeding 300 microns have been fabricated. In these long transistors, carrier transport is diffusive and the channel resistance dominates the transport. Transport characteristics are used to extract the field-effect mobility (79 000 cm(2)/Vs) and estimate the intrinsic mobility (>100 000 cm(2)/Vs) at room temperature. These values exceed those for all known semiconductors, which bodes well for application of nanotubes in high-speed transistors, single- and few-electron memories, and chemical/biochemical sensors.