Deep UV Ablation of PMMA Resists
Deep UV Ablation of PMMA Resists
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PMMA 抗蚀剂的深紫外烧蚀
DOI：
10.1143/jjap.22.l67
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发表时间：
1983
期刊：
影响因子：
--
通讯作者：
N. Viswanathan
中科院分区：
文献类型：
--
作者：
M. Lanagan;S. Lindsey;N. Viswanathan
采用特殊的深紫外光源，研究了聚甲基丙烯酸甲酯抗蚀剂体系在220 ~ 250 nm波段的深紫外曝光。PMMA抗蚀剂的消融遵循定量指数关系，与分子量和底物无关。高温下的侵蚀速率与PMMA的Tg有关。烧蚀表明PMMA中的解聚反应与链断裂同时发生。深紫外降解的反应途径不同于电子束和离子束降解PMMA的反应途径。
Deep UV exposure of Polymethyl methacrylate resist systems has been investigated in the spectral region 220–250 nm using a special deep UV light source. The ablation of PMMA resist follows a quantitative exponential relation and is independent of molecular weight and substrates. The erosion rates at higher temperatures show a dependence on the Tg of the PMMA. The ablation suggests depolymerization reactions in PMMA concurrent to chain scission. Reaction pathways in deep UV degradation are different from electron beam and ion beam degradations of PMMA.