Aharonov-Bohm interferences from local deformations in graphene
Aharonov-Bohm interferences from local deformations in graphene
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DOI：
10.1038/nphys2034
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发表时间：
2011-10-01
期刊：
影响因子：
19.6
通讯作者：
Cano, Andres
中科院分区：
文献类型：
--
作者：
de Juan, Fernando;Cortijo, Alberto;Cano, Andres
石墨烯最有趣的一个方面是它的结构和电子特性之间的密切关系。在独立石墨烯和衬底样品中观察到的波纹引起了对石墨烯膜样特性的积极研究，而波纹的起源仍然是该系统中最有趣的开放问题之一。通过虚拟规范场对曲率和弹性变形的建模，成功地描述了结构和电子性能的相互作用。在观察到石墨烯中由于应变而形成的朗道能级后，这些场已经成为实验现实。在这里，我们提出了一种基于扫描隧道显微镜装置的装置来检测石墨烯中的微应力，该装置能够在纳米尺度上测量Aharonov-Bohm干涉。预测的局部态密度的干扰是由与样品的弹性变形相关的虚拟磁场产生的。
One of the most interesting aspects of graphene is the close relation between its structural and electronic properties. The observation of ripples both in free-standing graphene and in samples on a substrate has given rise to active investigation of the membrane-like properties of graphene, and the origin of the ripples remains one of the most interesting open problems concerning this system. The interplay of structural and electronic properties is successfully described by the modelling of curvature and elastic deformations by fictitious gauge fields. These fields have become an experimental reality after the observation of the Landau levels that can form in graphene due to strain. Here we propose a device to detect microstresses in graphene based on a scanning-tunnelling-microscopy set-up able to measure Aharonov-Bohm interferences at the nanometre scale. The predicted interferences in the local density of states are created by the fictitious magnetic field associated with elastic deformations of the sample.