Low-temperature susceptibility of the noncentrosymmetric superconductor CePt3Si.
Low-temperature susceptibility of the noncentrosymmetric superconductor CePt3Si.
复制标题
非中心对称超导体 CePt3Si 的低温磁化率。
DOI：
10.1103/physrevlett.94.107001
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发表时间：
2004
影响因子：
8.6
通讯作者：
J. Chan
中科院分区：
文献类型：
--
作者：
D. Young;M. Moldovan;X. S. Wu;P. Adams;J. Chan
我们报道了多晶CePt(3)Si在低至60 mK和高至9 T的电场中的交流磁化率测量结果。在零电场中，在温度T/T(c) < 0.3时出现完整的迈斯纳态，其中T(c) = 0.65 K为起始转变温度。虽然输运测量显示相对较高的上临界场B（c2）约为4-5 T，但低温敏感性chi（‘）对施加的电场非常脆弱，chi（’）在几kG的电场中迅速降低。有趣的是，chi（‘）的场依赖性由幂律4pichi（’） + 1 = (B/B(c))（1/2）很好地描述，其中B(c)是在输运测量中观察到阻力开始的场。
We report ac susceptibility measurements of polycrystalline CePt(3)Si down to 60 mK and in applied fields up to 9 T. In a zero applied field, a full Meissner state emerges at temperatures T/T(c) < 0.3, where T(c) = 0.65 K is the onset transition temperature. Though transport measurements show a relatively high upper critical field B(c2) approximately 4-5 T, the low-temperature susceptibility chi(') is quite fragile to the applied field, with chi(') diminishing rapidly in fields of a few kG. Interestingly, the field dependence of chi(') is well described by the power law 4pichi(') + 1 = (B/B(c))(1/2), where B(c) is the field at which the onset of resistance is observed in transport measurements.