Visible light emission from polymer-based field-effect transistors
Visible light emission from polymer-based field-effect transistors
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DOI：
10.1063/1.1710713
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发表时间：
2004-04
影响因子：
4
通讯作者：
T. Sakanoue;Eiichi Fujiwara;R. Yamada;H. Tada
中科院分区：
文献类型：
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作者：
T. Sakanoue;Eiichi Fujiwara;R. Yamada;H. Tada
在SiO2/Si衬底上，采用Cr/Au和Al/Au底接触型叉指电极，制备了基于聚[2-甲氧基，5-（2′-乙基己氧基）-1，4-亚苯基亚乙烯]（MEH-PPV）的场效应晶体管（FET）。MEH-PPV具有p型半导体特性，在真空中工作时，观察到橙子光发射。结果表明，Al/Au电极的场效应晶体管的发光效率高于Cr/Au电极。同时注入到MEH-PPV的空穴和电子有效地发生与Al/Au异质电极的应用。
Field-effect transistors (FETs) based on poly [2-methoxy, 5-(2′-ethyl-hexoxy)-1, 4-phenylenevinylene] (MEH-PPV) were prepared with bottom-contact type interdigital electrodes of Cr/Au and Al/Au on the SiO2/Si substrates. MEH-PPV exhibited a p-type semiconducting behavior and orange light emission was observed when the devices were operated in vacuum. It was found that the luminescence efficiency of the FETs with Al/Au electrodes was higher than that of Cr/Au electrodes. The simultaneous injection of holes and electrons into MEH-PPV occurred efficiently with the application of Al/Au heteroelectrodes.