Effect of Displacement Deposition on Platinum Deposition within Nanoporous Silicon
Effect of Displacement Deposition on Platinum Deposition within Nanoporous Silicon
复制标题
置换沉积对纳米多孔硅内铂沉积的影响
DOI：
10.1149/06902.0029ecst
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Kuniaki Murase
中科院分区：
文献类型：
--
作者：
Akira Koyama;Kazuhiro Fukami;Ryo Koda;Tetsuo Sakka;Takeshi Abe;Atsushi Kitada;Kuniaki Murase
报道了在电沉积过程中铂（Pt）在纳米多孔硅（Si）电极内的置换沉积的贡献。Pt沉积物的量的时间变化揭示了在电沉积期间在纳米孔内优先进行置换沉积。足够厚的多孔层由于其大的可氧化区域而促进Si氧化反应。这导致快速驱替沉积，导致孔隙开口处的不利堵塞。多孔硅的预阳极氧化在一定程度上抑制了置换沉积，使Pt络阴离子的渗透没有堵塞的阻碍。
The contribution of platinum (Pt) displacement deposition within the nanoporous silicon (Si) electrode during electrodepostion is reported. Time variations of the amount of Pt deposits reveal that the displacement deposition preferentially proceeds within the nanopores during electrodeposition. Sufficiently thick porous layer promotes the Si oxidation reaction due to its large oxidizable areas. This leads to fast displacement deposition that results in the unfavorable plugging at the pore opening. Pre-anodization of porous silicon suppresses the displacement deposition to some extent and enables the penetration of Pt complex anions without the obstruction by the plugging.