Raman Scattering Study of K3H(SeO4)2 Single Crystal in High Temperature Phases
Raman Scattering Study of K3H(SeO4)2 Single Crystal in High Temperature Phases
复制标题
K3H(SeO4)2单晶高温相拉曼散射研究
DOI：
10.1143/jpsj.70.155
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
Y. Matsumoto
中科院分区：
文献类型：
--
作者：
Y. Matsumoto
研究了氘代化合物Rb 3D（SeO 4）2单晶在79.2 ~ 480.0K温度范围内的拉曼散射.在827 cm-1处出现一条新的拉曼谱线，它与温度和氘代度无关，且比超离子相变温度低60 K。有人认为这是由于SeO 4四面体中单个Se-O的伸缩运动伴随着氢键的破坏和重建引起的。在低温区，Rb 3D（SeO 4）2的介电常数在100 KHz下测得，在93 K时出现λ型反常，而在该温度上下观测到的拉曼谱几乎相同。
Raman scattering from the deuterated compound Rb 3 D(SeO 4 ) 2 single crystal is studied in the temperature range between 79.2 K and 480.0 K. A new Raman line appears at 827 cm -1 as much as 60 K below the superionic phase transition temperature, and does not depend on temperature and deuteration. It has been suggested that this line is caused by the stretching motion of a single Se–O in SeO 4 tetrahedra accompanied by the destruction and reconstruction of a hydrogen bond. In low temperature region, the dielectric constant of Rb 3 D(SeO 4 ) 2 , measured at 100 KHz, shows a λ-type anomaly at 93 K, while the observed Raman spectra are almost the same above and below this temperature.