Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots -: art. no. 073307
Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots -: art. no. 073307
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DOI：
10.1103/physrevb.63.073307
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发表时间：
2001-02-15
影响因子：
3.7
通讯作者：
Krauss, TF
中科院分区：
文献类型：
--
作者：
Finley, JJ;Ashmore, AD;Krauss, TF
报道了In（Ga）As单量子点的光致发光谱中存在带电（X*）和中性（X）激子复合。光致发光激发（PLE）光谱表明，带电激子的创建仅用于激发在结构的阻挡层或包覆层，与他们的带电字符一致，而中性激子另外显示出明确定义的激发功能的点的共振激发。的PLE光谱的X和X* 表现出明确的润湿层过渡的区域中的关系，表明它们竞争的光生载流子。
Charged (X*) and neutral (X) exciton recombination is reported in the photoluminescence spectra of single In(Ga)As quantum dots. Photoluminescence excitation (PLE) spectra show that the charged excitons are created only for excitation in the barrier or cladding layers of the structure, consistent with their charged character, whereas the neutral excitons in addition show well-defined excitation features for resonant excitation of the dots. The PLE spectra for X and X* exhibit a clear anticorrelation in the region of the wetting layer transition, showing that they compete for photocreated carriers.