Selective chemical vapor deposition of HfB 2 on Al 2 O 3 over SiO 2 and the acceleration of nucleation on SiO 2 by pretreatment with Hf[N(CH 3 ) 2 ] 4
Selective chemical vapor deposition of HfB 2 on Al 2 O 3 over SiO 2 and the acceleration of nucleation on SiO 2 by pretreatment with Hf[N(CH 3 ) 2 ] 4
复制标题
SiO 2 上Al 2 O 3 选择性化学气相沉积HfB 2 及Hf[N(CH 3 ) 2 ] 4 预处理加速SiO 2 成核
DOI：
10.1116/6.0000691
复制
发表时间：
2021
影响因子：
2.9
通讯作者：
Abelson, John R.
中科院分区：
文献类型：
--
作者：
Zhang, Zhejun V.;Liu, Sumeng;Girolami, Gregory S.;Abelson, John R.
