Thermoelectric and Optical Properties of Advanced Thermoelectric Devices from Different Multilayer Thin Films
Thermoelectric and Optical Properties of Advanced Thermoelectric Devices from Different Multilayer Thin Films
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不同多层薄膜先进热电器件的热电和光学性能
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
S. Budak
中科院分区：
文献类型：
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作者：
Mebougna L. Drabo;S. Budak
采用直流/射频磁控溅射技术，采用Ge/Si+Ge、Si+Ge、Si、Sb+Ge、Ge、SiO2/SiO2+Ge的不同多层薄膜结构制备了热电器件。使用 Filmetrics UV 厚度测量系统测量沉积薄膜的厚度。使用阿拉巴马A和M大学的Pelletron高能束加速器以不同注量（剂量）对所制备的热电器件进行5 MeV Si离子轰击，在多层薄膜中形成量子结构，以提高热电器件的效率。已经进行了室温下多层薄膜的电导率测量、功率因数测量的注量依赖性、热导率测量的注量依赖性以及品质因数计算。制备热电器件后，对制备的多层薄膜的横截面进行了 X 射线衍射、扫描电子显微镜 (SEM) + 能量色散 X 束光谱 (EDS) 和扫描透射电子显微镜 (TEM) 测量，为我们制造的热电器件的厚度提供了一些答案。
Thermoelectric devices were prepared using different multilayered thin film structures in the order of Ge/Si+Ge, Si+Ge, Si, Sb+Ge, Ge and SiO2/SiO2+Ge by DC/RF Magnetron Sputtering. The thickness of the deposited thin films were measured using Filmetrics UV thickness measurement system. The prepared thermoelectric devices have been modified with 5 MeV Si ions bombardments at the different fluences (doses) using Pelletron high energy beam accelerator at Alabama A and M University to form quantum structures in the multilayer thin films to improve the efficiency of the thermoelectric devices. The conductivity measurements, the fluence dependence of the power factor measurements, the fluence dependence of thermal conductivity measurements and the figure of merit calculations of multilayered thin films at room temperature have been performed. After the thermoelectric devices were prepared, X-ray Diffraction, Scanning Electron Microscopy (SEM) + Energy-Dispersive X-beam Spectroscopy (EDS) and Scanning Transmission Electron Microscopy (TEM) measurements have been done from the cross section of the prepared multilayer thin films to give us some answer for the thickness of the fabricated thermoelectric devices.