Magnetization precession induced by quasitransverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As
Magnetization precession induced by quasitransverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As
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DOI：
10.1103/physrevb.87.060302
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发表时间：
2013-02-19
影响因子：
3.7
通讯作者：
Bayer, M.
中科院分区：
文献类型：
--
作者：
Bombeck, M.;Jaeger, J. V.;Bayer, M.
注入到铁磁（311）（Ga，Mn）As膜中的飞秒和准横向皮秒应变脉冲在膜中引起动态剪切应变，从而调制磁各向异性并引起频率类似于10 GHz的磁化的共振进动。准横向应变对面外磁化分量的调制达到平衡磁化强度的10%。我们的理论分析是在很好的协议与观测结果，从而提供了一个战略的超快磁化控制铁磁薄膜的应变脉冲。DOI：10.1103/PhysRevB.87.060302
Quasilongitudinal and quasitransverse picosecond strain pulses injected into a ferromagnetic (311) (Ga,Mn)As film induce dynamical shear strain in the film, thereby modulating the magnetic anisotropy and inducing resonant precession of the magnetization at a frequency similar to 10 GHz. The modulation of the out-of-plane magnetization component by the quasitransverse strain reaches amplitudes as large as 10% of the equilibrium magnetization. Our theoretical analysis is in good agreement with the observed results, thus providing a strategy for ultrafast magnetization control in ferromagnetic films by strain pulses. DOI: 10.1103/PhysRevB.87.060302