Improvement of SiO2 properties and silicon surface passivation by heat treatment with high-pressure H2O vapor
Improvement of SiO2 properties and silicon surface passivation by heat treatment with high-pressure H2O vapor
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DOI：
10.1143/jjap.37.l1452
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发表时间：
1998-12-01
期刊：
影响因子：
--
通讯作者：
Saitoh, T
中科院分区：
文献类型：
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作者：
Sameshima, T;Sakamoto, K;Saitoh, T
采用高压水蒸汽热处理，提高真空蒸发形成的SiOx （x < 2）薄膜的性能，使硅表面钝化。在340-420℃的热处理下，SiOx薄膜转变为具有类似于热生长SiO2薄膜的Si-O-Si键合网络的SiO2薄膜。用2.4 x 10(6)-Pa-H2O蒸汽在340℃下热处理3 h后，界面阱态密度和固定正电荷密度分别降至6.5 x 10(10) cm(-2) eV（-1）和2.5 x 10(11) cm（-2）。热处理使电子少数载流子的复合速度从1200 cm/s（制备时）降至140 cm/s。
Heat treatment with high-pressure H2O vapor was applied to improve the properties of SiOx (x < 2) films formed by vacuum evaporation, for passivation of the silicon surface. Heat treatment at 340-420 degrees C changed SiOx films into SiO2 films with an Si-O-Si bonding network similar to that of thermally grown SiO2 films. The densities of interface trap states and fixed positive charges were reduced to 6.5 x 10(10) cm(-2) eV(-1) and 2.5 x 10(11) cm(-2), respectively, after heat treatment at 340 degrees C with 2.4 x 10(6)-Pa-H2O vapor for 3 h. The heat treatment reduced the recombination velocity for the electron minority carriers from 1200 cm/s (as fabricated) to 140 cm/s.