Long-Wavelength InAs/GaSb Superlattice Detectors on InAs Substrates With n-on-p Polarity
Long-Wavelength InAs/GaSb Superlattice Detectors on InAs Substrates With n-on-p Polarity
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具有 n-on-p 极性的 InAs 衬底上的长波长 InAs/GaSb 超晶格探测器
DOI：
10.1109/jqe.2020.3008259
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发表时间：
2020
影响因子：
2.5
通讯作者：
Huang Yong
中科院分区：
文献类型：
--
作者：
Liu Jiafeng;Teng Yan;Hao Xiujun;Zhao Yu;Wu Qihua;Li Xin;Zhu He;Chen Ying;Huang Rong;Ding Sunan;Huang Yong
我们报告了基于在 InAs 衬底上通过金属有机化学气相沉积 (MOCVD) 生长的 InAs/GaSb II 型超晶格实现了具有 n-on-p 极性的高性能长波长红外探测器。在具有 PNn 异质结构的普通 n-on-p 器件中，锌 (Zn) 会扩散到关键的 n 型势垒层中并导致高漏电流。通过在p型区域生长后插入200nm的未掺杂间隔层，Zn扩散被完全限制在间隔层中。带间隔物的 n-on-p 器件表现出与 p-on-n 器件相当的性能，在 80 K 时 -0.1 V 时暗电流密度为 <inline-formula> <tex-math notation="LaTeX">$6\times 10^{-4}$ </tex-math></inline-formula> A/cm<sup>2</sup>，峰值量子效率为 <inline-formula> <tex-math notation="LaTeX">$\sim 12~\mu \text{m}$ </tex-math></inline-formula> 的 ~24% 和 100% 截止波长。
We report the realization of high-performance long-wavelength infrared detectors with n-on-p polarity based on InAs/GaSb type-II superlattices grown by metalorganic chemical vapor deposition (MOCVD) on InAs substrate. In a normal n-on-p device with PNn heterostructure, Zinc (Zn) is found to diffuse into the critical n-type barrier layer and leads to a high leakage current. By inserting a 200 nm undoped spacer layer after the p-type region is grown, Zn diffusion is completely confined in the spacer layer. The n-on-p device with the spacer shows performances equivalent to those of a p-on-n counterpart, with a dark current density of <inline-formula> <tex-math notation="LaTeX">$6\times 10^{-4}$ </tex-math></inline-formula> A/cm<sup>2</sup> at −0.1 V at 80 K, a peak quantum efficiency of ~24%, and 100% cut-off wavelength of <inline-formula> <tex-math notation="LaTeX">$\sim 12~\mu \text{m}$ </tex-math></inline-formula>.