Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure
Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure
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基于谐振隧道 AlGaAs/GaAs 异质结构的热电子冷却装置
DOI：
10.1088/1361-648x/aaa4cf
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
and K. Hirakawa
中科院分区：
文献类型：
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作者：
M. Bescond;D. Logoteta;F. Michelini;N. Cavassilas;T. Yan;A. Yangui;M. Lannoo;and K. Hirakawa
采用全量子模拟的方法研究了谐振隧穿滤波和热离子发射相结合的半导体异质结构制冷机的工作原理和性能。我们的模型通过自洽求解非平衡格林函数框架内的输运方程和热方程，考虑了电流和热流之间的耦合。我们表明，该装置可以实现相对较高的冷却功率值，而在考虑的实现中，最大晶格温度降受到构成材料导热性的严重限制。在这种非平衡结构中，我们强调声子温度与其电子对应物的显著偏差，其变化可以超过几百开尔文。讨论了这两种温度之间的相互作用以及对电化学电位的影响。最后，提出了优化器件的可行方案。
We study by means of full quantum simulations the operating principle and performance of a semiconductor heterostructure refrigerator combining resonant tunneling filtering and thermionic emission. Our model takes into account the coupling between the electric and thermal currents by self-consistently solving the transport equations within the non-equilibrium Green's function framework and the heat equation. We show that the device can achieve relatively high cooling power values, while in the considered implementation, the maximum lattice temperature drop is severely limited by the thermal conductivity of the constituting materials. In such an out-of-equilibrium structure, we then emphasize the significant deviation of the phonon temperature from its electronic counterpart which can vary over several hundred Kelvin. The interplay between those two temperatures and the impact on the electrochemical potential is also discussed. Finally, viable options toward an optimization of the device are proposed.