Preparation of Ca–Si–O films by chemical vapor deposition
Preparation of Ca–Si–O films by chemical vapor deposition
复制标题
化学气相沉积法制备Ca-Si-O薄膜
DOI：
10.1016/j.surfcoat.2010.10.024
复制
发表时间：
2010
影响因子：
5.4
通讯作者：
T. Goto
中科院分区：
文献类型：
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作者：
S. Nath;R. Tu;T. Goto
以二新戊酰甲烷钙（Ca（dpm）2）和正硅酸乙酯（TEOS）为原料，采用化学气相沉积法制备了Ca-Si-O薄膜。研究了Si/Ca摩尔比（RSi/Ca）和衬底温度（Tsub）对Ca-Si-O薄膜晶相、微结构和沉积速率的影响。三个主要阶段，即，随着CaO和非晶相的形成，得到了沿着的CaSiO 3、Ca 2SiO 4和Ca 3SiO 5。在Tsub=923 ~ 1023 K，RSi/Ca=49时，得到了单相的Ca_2SiO_4薄膜。显微结构是粒状的，随着RSi/Ca的增加，从菜花状变为粒状。在Tsub= 1323 K和RSi/Ca=29时，最大沉积速率为240μmh− 1。
Ca–Si–O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)2) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (RSi/Ca) and the substrate temperature (Tsub) on the crystal phase, microstructure and deposition rate of Ca–Si–O films were investigated. Three main phases, i.e., CaSiO3, Ca2SiO4and Ca3SiO5, were obtained along with the CaO and amorphous phases. At Tsub=923 to 1023K and RSi/Ca=49, Ca2SiO4film in a single phase was obtained. The microstructure was granular and changed from a cauliflower-like to a granular type with increasing RSi/Ca. The maximum deposition rate was 240μmh−1at Tsub=1323K and RSi/Ca=29.
MOCVD法制备磷酸钙薄膜
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
Mitsutaka Sato;Rong Tu and Takashi Goto
通讯作者：
Rong Tu and Takashi Goto