Electron tunneling through double magnetic barriers on the surface of a topological insulator
Electron tunneling through double magnetic barriers on the surface of a topological insulator
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电子隧道穿过拓扑绝缘体表面的双磁垒
DOI：
10.1103/physrevb.82.115211
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发表时间：
2010-09-24
影响因子：
3.7
通讯作者：
Chang, Kai
中科院分区：
文献类型：
--
作者：
Wu, Zhenhua;Peeters, F. M.;Chang, Kai
我们研究了三维拓扑绝缘体表面的平面磁势垒和平面电势垒中的电子隧穿。对于双势垒结构，我们发现：（i）对磁场结构和栅电压敏感的方向依赖隧穿，（ii）由磁场和栅电压控制的自旋旋转，（iii）由两个势垒之间的距离决定的透射中的许多Fabry-Perot共振，以及（iv）静电势可以增强两种磁化配置之间的透射差，从而导致巨磁阻。点（i）、（iii）和（iv）与石墨烯中的点相似，源于相同的线性色散关系。
We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.