Mid-Infrared Thermo-Optic Modulators in SoI
Mid-Infrared Thermo-Optic Modulators in SoI
复制标题
DOI：
10.1109/lpt.2014.2323702
复制
发表时间：
2014-07-01
影响因子：
2.6
通讯作者：
Mashanovich, Goran Z.
中科院分区：
文献类型：
--
作者：
Nedeljkovic, Milos;Stankovic, Stevan;Mashanovich, Goran Z.
我们报告的热光调制器在绝缘体上硅（SoI）材料工作在3.8 μ m的波长的实验结果。这些设备是基于非对称马赫-曾德尔干涉仪（MZI）与铝加热器放置在一个MZI臂。使用的SoI肋波导与400 nm的Si器件层厚度。研究了具有传统直MZI臂和螺旋MZI臂几何形状的器件。直臂MZI具有更高的调制深度，高达30.5 dB，而螺旋臂MZI需要更小的开关功率，低至47 mW。测得的-3 dB带宽高达23.8 kHz，并且不随设备配置而显著变化。
We report experimental results for thermo-optic modulators in silicon-on-insulator (SoI) material operating at the wavelength of 3.8 mu m. These devices are based on asymmetric Mach-Zehnder interferometers (MZIs) with aluminum heaters placed above one MZI arm. The SoI rib waveguides with 400-nm Si device layer thickness are used. Devices with conventional straight MZI arm and spiral MZI arm geometries are investigated. Straight-arm MZIs exhibited higher modulation depths, of up to 30.5 dB, whereas spiral-arm MZIs required smaller switching powers, as low as 47 mW. Measured -3 dB bandwidths were up to 23.8 kHz and did not vary significantly with device configuration.