Stochastic Optimization of the CPL-Function-Based Model for RF Power Transistors
Stochastic Optimization of the CPL-Function-Based Model for RF Power Transistors
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DOI：
10.1109/lmwc.2022.3149751
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发表时间：
2022-07
影响因子：
3
通讯作者：
Jialin Cai;J. King;Shichang Chen;Bin You;Wenjun Li;Jun Liu
中科院分区：
文献类型：
--
作者：
Jialin Cai;J. King;Shichang Chen;Bin You;Wenjun Li;Jun Liu
本文提出了一种同时扰动随机近似（SPSA）算法，用于优化射频功率晶体管基于规范分段线性（CPL）函数模型的阈值。与现有的标准基于CPL函数的模型相比，所提出的优化技术可以大大提高模型性能。两种不同的基于CPL的模型，CPL Y/二次Y（QY）模型和规范的分段线性（CSWPL）模型，被用来验证所提出的技术。Cree公司的10 W GaN器件的实验测试，显示了所提出的技术的有效性。
In this article, the simultaneous perturbation stochastic approximation (SPSA) algorithm is proposed to optimize the threshold of the canonical piecewise linear (CPL) function-based models for radio frequency (RF) power transistors. Compared with the existing standard CPL-function-based model, the proposed optimization technique can greatly improve model performance. Two different CPL-based models, the CPL Y/quadratic Y (QY) model and the canonical section-wise piecewise linear (CSWPL) model, are used to verify the proposed technique. Experimental test of a 10-W GaN device from Cree is presented, showing the effectiveness of the proposed technique.