Evaluation of InGaAs 640×512 detector array manufactured by Chunghwa Leading Photonics Tech
Evaluation of InGaAs 640×512 detector array manufactured by Chunghwa Leading Photonics Tech
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中华领先光电制造的InGaAs 640×512探测器阵列的评估
DOI:
10.1117/12.2055084
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发表时间:
2014
期刊:
影响因子:
--
通讯作者:
Kaneda Hidehiro
中科院分区:
文献类型:
--
作者:
Nagayama Takahiro;Takeuchi Nami;Kokusho Takuma;Yamanaka Asa;Nishiyama Miho;Kaneda Hidehiro
Focal Plane Arrays (FPA) are key items for modern astronomical observations in the near infrared wavelength, but it is very expensive and not easy to get them. Less expensive NIR FPAs with reasonable performance are very important to spread NIR observation extensively. FPA640×512 manufactured by Chunghwa Leading Photonics Tech is a 640×512 InGaAs detector covering the 0.9-1.7μm wavelength. Since this array is significantly cheaper than the commonly used NIR FPAs in the astronomical observation, it is possible to be a good choice for particular projects which do not need many pixels, if FPA640×512 has acceptable performance for the purpose. We have evaluated one test grade array of FPA640×512 both in the room and low temperature environment. In order to evaluate the characteristics of this FPA in the low temperature environment, we cooled it down by the mechanical refrigerator and confirmed that it works at 100 K. We have found that the dark current reduces exponentially as the FPA temperature decreases, but it hits the bottom at~1000e−/secbellow 200 K with the default setting. We are trying to reduce the dark current by optimizing the bias voltage and the current to the MUX circuit. The latest experiments have shown the possibility that the dark current decreases to~200e−/sec. This value is still higher than that of NIR FPAs used in the scientific observation, but it may be applicable for the particular purpose, for example, FPAs for slit viewer in spectrometers, wave front sensor, and so on.