Quantum metrology with a single spin-3/2 defect in silicon carbide
Quantum metrology with a single spin-3/2 defect in silicon carbide
复制标题
碳化硅中单个自旋 3/2 缺陷的量子计量
DOI：
10.1103/physrevb.95.081405
复制
发表时间：
2016
影响因子：
3.7
通讯作者：
T. Reinecke
中科院分区：
文献类型：
--
作者：
O. Soykal;T. Reinecke
We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using spin-$\frac{3}{2}$ semiconductor defect states. We illustrate this using the silicon monovacancy deep center in hexagonal SiC based on our rigorous derivation of this defect's ground state and of its electronic and optical properties. For a single ${\mathrm{V}}_{\mathrm{Si}}^{\ensuremath{-}}$ defect, we obtain magnetic field sensitivities capable of detecting individual nuclear magnetic moments. We also show that its zero-field splitting has an exceptional strain and temperature sensitivity within the technologically desirable near-infrared window of biological systems. The concepts and sensing schemes developed here are applicable to other point defects with half spin multiplet ($S\ensuremath{\ge}\frac{3}{2}$) configurations.
We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using spin-$\frac{3}{2}$ semiconductor defect states. We illustrate this using the silicon monovacancy deep center in hexagonal SiC based on our rigorous derivation of this defect's ground state and of its electronic and optical properties. For a single ${\mathrm{V}}_{\mathrm{Si}}^{\ensuremath{-}}$ defect, we obtain magnetic field sensitivities capable of detecting individual nuclear magnetic moments. We also show that its zero-field splitting has an exceptional strain and temperature sensitivity within the technologically desirable near-infrared window of biological systems. The concepts and sensing schemes developed here are applicable to other point defects with half spin multiplet ($S\ensuremath{\ge}\frac{3}{2}$) configurations.