Molecular design of improved precursors for the MOCVD of oxides used in microelectronics
Molecular design of improved precursors for the MOCVD of oxides used in microelectronics
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DOI：
10.1016/j.surfcoat.2007.04.118
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发表时间：
2007-09-25
影响因子：
5.4
通讯作者：
Chalker, Paul R.
中科院分区：
文献类型：
--
作者：
Jones, Anthony C.;Aspinall, Helen C.;Chalker, Paul R.
金属有机化学气相沉积（MOCVD）是一种有吸引力的技术，用于沉积介电和铁电氧化物薄膜，如ZrO2， HfO2 hf铝酸盐和硅酸盐，镧系氧化物，Pb(ZrTi)O-3和SrBi(2)fa(2)O(9)，它们在微电子器件中有各种应用。本文介绍了一系列新型氧化物前驱体的分子设计。研究表明，前驱体配体的精心选择和设计，如烷氧化物和β -二酮酸盐，可以改善前驱体的物理性能，显著提高MOCVD的性能。(c) 2007 Elsevier b.v.版权所有
Metalorganic chemical vapour deposition (MOCVD) is an attractive technique for the deposition of dielectric and ferroelectric oxide thin films such as ZrO2, HfO2 Hf-aluminate and -silicate, lanthanide oxides, Pb(ZrTi)O-3 and SrBi(2)fa(2)O(9), which have a variety of applications in microelectronic devices. In this paper the molecular design of a range of new oxide precursors is described. It is shown how the careful selection and design of precursor ligands, such as alkoxides and beta-diketonates, leads to precursors with improved physical properties and significantly enhanced MOCVD performance. (c) 2007 Elsevier B.V All rights reserved.