Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
复制标题
DOI：
10.1063/1.369725
复制
发表时间：
1999-03
影响因子：
3.2
通讯作者：
Jan Schmidt;A. Aberle
中科院分区：
文献类型：
--
作者：
Jan Schmidt;A. Aberle
使用偏光微波检测光电导衰减方法，在不同电阻率和掺杂类型的单晶硅片上，对等离子体增强化学气相沉积 (PECVD) 氮化硅 (SiNx) 薄膜钝化的硅表面的有效表面复合速度 Seff 进行依赖于注入水平的测量。为了从理论上模拟测量到的 Seff 对大量注入水平 Δn 的依赖性，使用了扩展的 Shockley-Read-Hall 形式。仿真输入参数是能量相关的界面态密度和所涉及界面缺陷的捕获横截面以及正绝缘体电荷密度 Qf。界面缺陷的能量相关特性通过小脉冲深能级瞬态光谱实验确定。这些测量揭示了 Si-SiNx 界面处存在三个“深”硅悬空键缺陷，它们具有相似的界面态密度，但非常不同...
Using the light-biased microwave-detected photoconductance decay method, injection level dependent measurements of the effective surface recombination velocity Seff at silicon surfaces passivated by plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) films are performed on monocrystalline silicon wafers of different resistivities and doping types. In order to theoretically simulate the measured dependences of Seff on the bulk injection level Δn, the extended Shockley-Read-Hall formalism is used. Simulation input parameters are the energy dependent interface state densities and capture cross sections of the involved interface defects as well as the positive insulator charge density Qf. The energy dependent properties of the interface defects are experimentally determined by means of small-pulse deep-level transient spectroscopy. These measurements reveal the existence of three “deep” silicon dangling bond defects at the Si-SiNx interface with similar interface state densities but very d...