Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si
Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si
复制标题
离子束合成 Si 中 β-FeSi2 沉淀的 1.54 μm 发光的起源和前景
DOI：
10.1063/1.125693
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发表时间：
2000
影响因子：
4
通讯作者：
M. Grimaldi
中科院分区：
文献类型：
--
作者：
C. Spinella;S. Coffa;C. Bongiorno;S. Pannitteri;M. Grimaldi
分析了Si中β-FeSi_2沉淀相的结构和光学性质。在250 °C下用350 keV Fe离子注入浮区Si样品，注量范围为1-5×1015/cm 2，并在800 °C下真空退火长达24 h。 使用透射电子显微镜对这些样品进行详细的形态学分析，发现存在（i）一条以320 nm深度为中心的完全弛豫的小β-FeSi 2沉淀带（直径100 nm），以及（iii）残留的扩展缺陷。在17 K下测得了1.54 μm的尖锐光致发光峰。当使用Ar溅射去除包含小沉淀物的区域时，该峰保持不变。另一方面，当去除大的沉淀物区域并且样品中保留高浓度的扩展缺陷时，它也被完全抑制。这使我们能够确定大的未应变沉淀物为...
The structural and optical properties of β-FeSi2 precipitates in Si have been analyzed. Float zone Si samples were implanted at 250 °C with 350 keV Fe ions to fluences in the range 1–5×1015/cm2 and annealed in vacuum at 800 °C for times up to 24 h. Detailed morphological analyses of these samples, using transmission electron microscopy, reveal the presence of (i) a band of small (with a diameter 100 nm diameter) fully relaxed β-FeSi2 precipitates centered at a depth of ∼320 nm, and (iii) residual extended defects. A sharp photoluminescence peak at 1.54 μm is measured at 17 K. This peak remains unchanged when the region containing the small precipitates is removed, using Ar sputtering. On the other hand, it is also fully suppressed when the large precipitates region is removed and a high concentration of extended defects remains in the samples. This allowed us to identify the large unstrained precipitates as...