Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices.
Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices.
复制标题
DOI：
10.1038/srep22353
复制
发表时间：
2016-03-01
影响因子：
4.6
通讯作者：
Malvestuto M
中科院分区：
文献类型：
--
作者：
Casarin B;Caretta A;Momand J;Kooi BJ;Verheijen MA;Bragaglia V;Calarco R;Chukalina M;Yu X;Robertson J;Lange FR;Wuttig M;Redaelli A;Varesi E;Parmigiani F;Malvestuto M
相变材料在数据存储和功能系统领域的技术成功源于其在纳米尺度上独特的电子和结构特性。近年来，超晶格结构已被证明可以显著改善这些硫系化合物基相变材料的光学和电学性能。从这个角度来看，揭开导致开关时间和开关能量改善的原子结构对于设计具有更强功能特性的纳米级结构至关重要。本研究通过扩展x射线吸收精细结构光谱和透射电子显微镜揭示了[GeTe/Sb2Te3]界面结构的高分辨率原子洞察力。基于我们的研究结果，我们提出了一种一致的新型硫系超晶格结构。
The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.