Three technologies for a smart miniaturized gas-sensor: SOI CMOS, micromachining, and CNTs - challenges and performance
Three technologies for a smart miniaturized gas-sensor: SOI CMOS, micromachining, and CNTs - challenges and performance
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智能微型气体传感器的三种技术：SOI CMOS、微加工和碳纳米管 - 挑战和性能
DOI：
10.1109/iedm.2007.4419077
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
S. Oh
中科院分区：
文献类型：
--
作者：
F. Udrea;S. Maeng;J. Gardner;J. Park;M. Haque;S.Z. Ali;Y. Choi;P. Guha;S. Vieira;H. Kim;S. Kim;K.C. Kim;S. Moon;K. Park;W. Milne;S. Oh
在本文中，我们通过晶圆蚀刻和气敏碳纳米管的生长，结合了三种最新进展，即绝缘体上硅 CMOS 技术，提出了一种新型固态气体传感器。我们开发了新型钨基 CMOS 微热板，具有超低功耗（250 摄氏度时低于 10 mW）、在高达 700 摄氏度的温度下进行片上 CNT 沉积以及 CMOS 电路的完全集成。此外，钨微热板比多晶硅等其他CMOS材料具有更好的稳定性。多壁碳纳米管电阻式气体传感器对空气中 PPB 水平的 NO2 表现出良好的响应，但需要额外加热才能提供合理的基线恢复时间。我们相信，我们的方法对于在硅铸造厂大规模生产低成本、低功耗气体传感器具有吸引力。
In this paper we propose a new type of solid-state gas sensor by combining three recent advances, namely silicon-on-insulator CMOS technology, through wafer etching and growth of gas-sensitive carbon nanotubes. We have developed novel tungsten-based CMOS micro-hotplates that offer ultra low power consumption (less than 10 mW at 250degC), on-chip CNT deposition at temperatures up to 700degC, and full integration of CMOS circuitry. Moreover, the tungsten micro-hotplates possess better stability than other CMOS materials such as polysilicon. The multi-walled CNT resistive gas sensors showed a good response to PPB levels of NO2 in air but required additional heating to provide reasonable baseline recovery times. We believe that our approach is attractive for the mass production of low-cost, low-power gas sensors in silicon foundries.