The growth and dislocation characterization of Yb0.005Y0.848Lu0.147VO4 mixed laser crystal
The growth and dislocation characterization of Yb0.005Y0.848Lu0.147VO4 mixed laser crystal
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Yb0.005Y0.848Lu0.147VO4混合激光晶体的生长和位错表征
DOI：
10.1002/crat.201400120
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发表时间：
2014
影响因子：
1.5
通讯作者：
You Peng
中科院分区：
文献类型：
--
作者：
Zhang Shiming;Teng Bing;Zhong Degao;Zhang Bingtao;Wang Chao;Li Yu-yi;Yang Liting;You Peng
采用直拉法成功生长了一种新型混合激光晶体 Yb0.005Y0.848Lu0.147VO4。使用ICP-OES测量晶体中元素（Yb、Y、Lu、V）的浓度，并确定化学式。 X射线粉末衍射分析表明该晶体具有ZrSiO4结构。高分辨电子显微镜观察到一对具有一定取向的刃位错，并通过衍射斑的校准确认了取向。通过对晶体结构和热膨胀的分析，给出了该类型位错的形成机制。还提出了避免这些错位的建议。
A new mixed laser crystal, Yb0.005Y0.848Lu0.147VO4, has been successfully grown using the Czochralski method. An ICP‐OES was used to measure the concentrations of elements (Yb, Y, Lu, V) in the crystal, and the chemical formula was determined. X‐ray powder diffraction analysis shows that the crystal has ZrSiO4structure. A pair of edge dislocations with certain orientation was observed by the HREM, and the orientation was confirmed by the calibration of the diffraction spots. The formation mechanism of this type dislocation was given by analysis on structure and thermal expansion of crystal. The suggestion to avoid these dislocations was also given.