Palladium interaction with silicon carbide
Palladium interaction with silicon carbide
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DOI：
10.1016/j.jnucmat.2015.03.013
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发表时间：
2015-07
影响因子：
3.1
通讯作者：
M. Gentile;P. Xiao;T. Abram
中科院分区：
文献类型：
--
作者：
M. Gentile;P. Xiao;T. Abram
本文采用热重分析（TG）、差示扫描量热分析（DSC）、X射线衍射（XRD）和X射线光电子能谱（XPS）等分析技术研究了Pd与SiC的相互作用，并在293 ~ 1773 K温度范围内对Pd、α-SiC和β-SiC高纯粉末进行了热扫描，为了研究温度对钯-碳化硅反应的影响，对含5at.% Pd的差示量热扫描结果表明，β-SiC颗粒在773 K、1144 K和1615 K处出现三个放热峰，而含3at.% Pd和5原子% Pd未显示峰。对于球团α-SiC-5 at.% Pd的XRD谱表明，第一个峰与Pd 3Si和SiO2相的形成有关，第二个峰与Pd 2Si相的形成有关，第三个峰与SiC的活性氧化有关。热重扫描显示由于SiO2相的形成和活性氧化的增重和失重峰。此外，XPS拟合揭示了在873 K的第一个放热峰期间SiCxOy相的发展。实验数据表明，α碳化硅是由钯攻击在较低的温度比β碳化硅和碳化硅和钯之间的反应机制是强烈的碳化硅氧化的影响。
In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction.Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOyphase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.