Rapid Synthesis of Yttria-Partially-Stabilized Zirconia Films by Metal-Organic Chemical Vapor Deposition
Rapid Synthesis of Yttria-Partially-Stabilized Zirconia Films by Metal-Organic Chemical Vapor Deposition
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金属有机化学气相沉积快速合成氧化钇部分稳定氧化锆薄膜
DOI：
10.2320/matertrans.43.2354
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发表时间：
2002
影响因子：
1.2
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
R. Tu;Teiichi Kimura;T. Goto
采用金属-有机化学气相沉积法，以Zr(μ)4和Y(Dpm)3为前驱体，在Hastelloy-XR热障涂层上以100dPm·h-1(2·8×10-8ms-1)的沉积速率制备了氧化钇部分稳定的氧化锆薄膜。在报道的化学气相沉积方法制备的YPSZ薄膜中，沉积速率为100μm h-1是最高的。YPSZ薄膜为柱状结构，(200)择优取向为四方结构。
Yttria-partially-stabilized zirconia (YPSZ) films were synthesized on Hastelloy-XR as thermal barrier coatings (TBC) at a high deposition rate of 100 μm h -1 (2.8 × 10 -8 ms -1 ) by metal-organic chemical vapor deposition (MOCVD) using Zr(dpm) 4 and Y(dpm) 3 precursors. The deposition rate of 100 μm h -1 was the highest among the reported values for YPSZ films by CVD. The YPSZ films were columnar morphology and (200) oriented with a tetragonal structure.