Charge collection mapping of the back-transfer process in Er-doped silicon
Charge collection mapping of the back-transfer process in Er-doped silicon
复制标题
掺铒硅中反向传输过程的电荷收集映射
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
S. Pizzini
中科院分区：
文献类型：
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作者：
A. Castaldini;A. Cavallini;B. Fraboni;S. Pizzini
对掺铒硅进行了电荷收集分析，研究了与λ=1.54 μm发光有关的Er ~（3+）离子的激发和退激发机制。 在材料中诱导的Er的存在下的缺陷态的载流子复合和俘获在Er 3+离子的激发和能量反向转移过程的非辐射衰减中起着重要作用。我们已经得到了一个二维地图的晶格位置发生的反向传输过程，并提供了实验证明的合作的两个不同的缺陷在激发和去激发过程。
Charge collection analyses have been carried out on Er-doped silicon to investigate the excitation and de-excitation mechanisms of the Er3+ ion related to the λ=1.54 μm luminescence. Carrier recombination and trapping at the defective states induced in the material by the presence of Er play a significant role in the excitation of the Er3+ ion and in its nonradiative decay by the energy back-transfer process. We have obtained a two-dimensional map of the lattice sites where the back-transfer process occurs, and provided experimental proof of the cooperation of two different defects in the excitation and de-excitation processes.