Transport and Magnetic Properties in the Gd1-xCaxVO3 System
Transport and Magnetic Properties in the Gd1-xCaxVO3 System
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DOI：
10.1143/jjap.50.101102
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发表时间：
2011-10
影响因子：
1.5
通讯作者：
Xue Zhang;Yan Zhang;Xiao-ming Wang;Xinxin An;Chinping Chen;X. Jing
中科院分区：
文献类型：
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作者：
Xue Zhang;Yan Zhang;Xiao-ming Wang;Xinxin An;Chinping Chen;X. Jing
采用固相反应法制备了Gd 1-xCaxVO 3（0.0≤x≤1）固溶体，并对其输运和磁性进行了研究。该系统表现出一个组成诱导的金属-绝缘体转变在x = 0.5-0.6和反铁磁-顺磁转变在x = 0.1-0.2。金属-绝缘体转变主要归因于填充控制机制。对于绝缘体范围0.0≤x≤0.5的样品，低温下的输运服从变程跳跃机制，高温下的输运服从热激活机制。对于具有巡游电子的金属范围0.6≤x < 1.0的样品，磁性表现出居里-外斯依赖性而不是泡利行为。泡利顺磁性质，观察到只有CaVO 3（x = 1.0）。
Solid solutions of the Gd1-xCaxVO3 system with 0.0≤x≤1 were prepared by solid state reactions, and a comprehensive study on their transport and magnetic properties was conducted. This system exhibits a composition-induced metal–insulator transition at x = 0.5–0.6 and an antiferromagnetic-to-paramagnetic transition at x = 0.1–0.2. The metal–insulator transition is mainly attributed to the filling-controlled mechanism. For the samples in the insulator range 0.0≤x≤0.5, the transport is subject to the variable range hopping mechanism at low temperatures and the thermally activated mechanism at high temperatures. For the samples in the metal range 0.6≤x < 1.0 with itinerant electrons, the magnetic properties show Curie–Weiss dependence rather than Pauli behavior. Pauli paramagnetic properties were observed only for CaVO3 (x = 1.0).