Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing
Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing
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DOI：
10.1088/0268-1242/21/3/l02
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发表时间：
2006-03
影响因子：
1.9
通讯作者：
V. Coleman;M. Buda;H. Tan;C. Jagadish;M. Phillips;K. Koike;S. Sasa;M. Inoue;M. Yano
中科院分区：
文献类型：
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作者：
V. Coleman;M. Buda;H. Tan;C. Jagadish;M. Phillips;K. Koike;S. Sasa;M. Inoue;M. Yano
采用低能（80 keV）氧离子注入和随后的800 °C快速热退火方法，在蓝宝石上生长了19个ZnO/Zn 0. 7 Mg 0. 3 O多量子威尔斯阱。在1 × 1016 cm−2的剂量下观察到大于300 meV的大蓝移，没有观察到饱和。这个过程是由通过注入产生的缺陷驱动的，该缺陷促进Mg从势垒层扩散到ZnO量子威尔斯中。尽管在注入过程中引入了缺陷，但是在快速热退火之后可以看到阴极射线发光的良好恢复。计算了相应离子剂量下的Zn-Mg互扩散，并提取了扩散系数。该研究对ZnO/ZnMgO光电器件的带隙设计具有重要意义。
Implantation with low-energy (80 keV) oxygen ions and subsequent rapid thermal annealing at 800 °C are used to induce intermixing in a stack of 19 ZnO/Zn0.7Mg0.3O multiple quantum wells grown on sapphire by molecular beam epitaxy. Large blue shifts of more than 300 meV have been observed for doses up to 1 × 1016 cm−2, with no observation of saturation. This process is driven by the creation of defects by implantation which encourage the diffusion of Mg from the barrier layers into the ZnO quantum wells. Although defects are introduced during the implantation process, good recovery of the cathodoluminescence is seen following rapid thermal annealing. The Zn–Mg interdiffusion in this system has also been calculated for the corresponding ion doses, and the diffusion coefficient extracted. This study has significant implications for band gap engineering of ZnO/ZnMgO optoelectronic devices.