Thickness dependent band structure of α-bismuthene grown on epitaxial graphene
Thickness dependent band structure of α-bismuthene grown on epitaxial graphene
复制标题
外延石墨烯上生长的α-铋烯的厚度依赖性能带结构
DOI：
10.1088/1361-648x/ac5e06
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Azuma Junpei
中科院分区：
文献类型：
--
作者：
Takahashi Kazutoshi;Imamura Masaki;Yamamoto Isamu;Azuma Junpei
近年来，随着人们对二维元素材料的极大兴趣，原子薄层铋由于强烈的自旋-轨道耦合而引起了人们的注意。为了进一步研究它们的拓扑电子性质，必须探索整个布里渊区的厚度相关电子能带结构。用角分辨光电子能谱的二维作图方法研究了α-铋(α-Bi)的锯齿和扶手方向的各向异性能带结构。双层(BLS)的层数从1层增加到2层时，空穴带的顶部将移动到
Along with the great interest in two-dimensional elemental materials that has emerged in recent years, atomically thin layers of bismuth have attracted attention due to physical properties on account of a strong spin–orbit coupling. Thickness dependent electronic band structure must be explored over the whole Brillouin zone in order to further explore their topological electronic properties. The anisotropic band structures along zig-zag and armchair directions of α-bismuthene (α-Bi) were resolved using the two-dimensional mapping of angle-resolved photoemission spectra. An increase in the number of layers from 1-to 2-bilayers (BLs) shifts the top of a hole band on