Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
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非极性（m 面）和半极性 (1122) InGaN 多量子阱激光二极管结构在蓝绿光 (480 nm) 和绿光 (514 nm) 波长下的受激发射
DOI：
10.1143/apex.1.091103
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发表时间：
2008
影响因子：
2.3
通讯作者：
S. Nakamura
中科院分区：
文献类型：
--
作者：
A. Tyagi;You;D. Cohen;M. Saito;K. Fujito;J. Speck;S. Denbaars;S. Nakamura
在体相GaN衬底上生长的非极性m面(1010)和单极(1122)InGaN多量子阱(MQW)激光二极管(LD)结构在室温光泵浦下观察到蓝绿(480 Nm)和绿(514 Nm)区域的受激发射(SE)。发射强度与泵浦功率有明显的阈值关系。对于半极性LD结构，在[1123]和[1010]两个垂直的面内方向之间也观察到了光学各向异性，沿[1123]方向发射的泵浦阈值明显降低。在阈值以上测量的SE波长相对于在阈值以下测量的自发辐射波长发生蓝移。这些初步结果表明，半极性(1122)GaN是实现蓝绿和绿色激光二极管的一个很有前途的方向。
Stimulated emission (SE) in the blue-green (480 nm) and green (514 nm) regime has been observed, at room temperature (RT) under optical pumping, from nonpolar m-plane (1010) and semipolar (1122) InGaN multi-quantum well (MQW) laser diode (LD) structures, respectively, grown on bulk GaN substrates. The emission intensity exhibited a clear threshold behavior with respect to the pump power. Optical anisotropy was also observed between the two perpendicular in-plane directions [1123] and [1010] for semipolar LD structures, with significantly lower pump thresholds for emission along [1123]. The SE wavelength, measured just above threshold, was blue-shifted with respect to the spontaneous emission wavelength measured just below threshold. These initial results indicate that semipolar (1122) GaN is a promising orientation for the realization of blue-green and green LDs.