Effect of oxygen partial pressure on silicon single crystal growth by floating zone technique: surface oxidation and Marangoni flow
Effect of oxygen partial pressure on silicon single crystal growth by floating zone technique: surface oxidation and Marangoni flow
复制标题
氧分压对浮区技术生长硅单晶的影响：表面氧化和马兰戈尼流
DOI：
10.1002/crat.200310076
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
T. Kojima
中科院分区：
文献类型：
--
作者：
T. Hibiya;Y. Asai;Masanobu Sumiji;T. Kojima
采用红外成像炉采用浮区法生长硅单晶，炉入口氧分压范围为 1×10−2Pa 至 8.2×102Pa（Po2surface = 5.3 × 10−24Pa 至 3.6 × 10−14Pa），马兰戈尼数从 2070 变为 616。生长晶体的表面氧化程度取决于氧分压。环境大气压力。几乎所有晶体中的条纹图案都显示出单一频率。当 Po2inlet = 4.9 × 102Pa（Po2surface = 1.3 × 10−14Pa：假想马兰戈尼数为 700）时，在熔体表面观察到 SiO2 沉淀。当 Po2 入口 = 8.2 × 102Pa（Po2 表面 = 3.6 × 10−14Pa：假想马兰戈尼数 616）时（超过 SiO2 相的平衡氧分压），硅样品发生多晶化，并且没有出现生长条纹。表面张力温度系数 |‐∂σ/∂T|尽管已经报道了许多小值，但小于 0.25 × 10−3 N/m-K 是不现实的。
Silicon single crystals were grown by the floating‐zone method using an infrared image furnace in the wide range of oxygen partial pressure defined at the inlet of the furnace from 1×10−2Pa to 8.2×102Pa (Po2surface = 5.3 × 10−24Pa to 3.6 × 10−14Pa), so that the Marangoni number was changed from 2070 to 616. Degree of surface oxidation of the grown crystal was dependent on oxygen partial pressure of an ambient atmosphere. Striation pattern in almost all crystal shows a single frequency. At Po2inlet = 4.9 × 102Pa (Po2surface = 1.3 × 10−14Pa: imaginary Marangoni number of 700) precipitation of SiO2 was observed at the melt surface. At Po2inlet = 8.2 × 102Pa (Po2surface = 3.6 × 10−14Pa: imaginary Marangoni number of 616), which is over the equilibrium oxygen partial pressure for a SiO2 phase, the silicon specimen was polycrystallized and showed no growth striation. Temperature coefficient of surface tension |‐∂σ/∂T| less than 0.25 × 10−3 N/m‐K is not realistic, although many small values have been reported.